Win Source Part Number: 1216339-NJVMJD31CG
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 75
Mounting: SMD (SMT)
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NJVMJD31CG-ND,NJVMJD
Base Product Number: NJVMJD31
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK
3.0 A, 100 V NPN Bipolar Power Transistor, 75-TUBE Product overview: NJVMJD31CG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.0 A, 100 V. Search-friendly keywords include transistor, BJT, switching, amplification, 3.0 A, 100 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD31CG can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT BIP DPAK NPN 3A 100V
TRANS NPN 100V 3A DPAK
TRANSISTOR, BIPOLAR, NPN, 100V, 3A/TO252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1216339-NJVMJD31CG | NJVMJD31CGOS-ND | 276-NJVMJD31CG | NJVMJD31CG | NJVMJD31CG | 28X8017 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Single Bipolar Transistors | 3.0 A 100 V Bipolar Transistor | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar, Npn, 100V, 3A/to252; Transistor Polarity Onsemi |
| Polarity | NPN | NPN | NPN | NPN | ||
| Package Type | SOT3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | |||
| IC(max) | 3000 milliamps | 5000 milliamps | 3000 milliamps | 3000 milliamps | ||
| Power Gain | 10 dB | |||||
| Operating Frequency | 3 MHz |
