onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single NJVMJD31CG

Description
Win Source Part Number: 1216339-NJVMJD31CG Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tube Standard Package: 75 Mounting: SMD (SMT) Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 3 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NJVMJD31CG-ND,NJVMJD 31CGOS Base Product Number: NJVMJD31
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1216339-NJVMJD31CG - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - NJVMJD31CGOS-ND - DigiKey
    DigiKey
  • Transistor, Bipolar, Npn, 100V, 3A/to252; Transistor Polarity Onsemi - 28X8017 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD31CG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1216339-NJVMJD31CG Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tube Standard Package: 75 Mounting: SMD (SMT) Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 3 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NJVMJD31CG-ND,NJVMJD 31CGOS Base Product Number: NJVMJD31
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1216339-NJVMJD31CG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1216339-NJVMJD31CG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1216339-NJVMJD31CG
Win Source Part Number: 1216339-NJVMJD31CG Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tube Standard Package: 75 Mounting: SMD (SMT) Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 3 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NJVMJD31CG-ND,NJVMJD 31CGOS Base Product Number: NJVMJD31

Win Source Part Number: 1216339-NJVMJD31CG
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tube
Standard Package: 75
Mounting: SMD (SMT)
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NJVMJD31CG-ND,NJVMJD31CGOS
Base Product Number: NJVMJD31

Buy Now Datasheet
Single Bipolar Transistors - NJVMJD31CGOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NJVMJD31CGOS-ND
Single Bipolar Transistors NJVMJD31CGOS-ND
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Transistor, Bipolar, Npn, 100V, 3A/to252; Transistor Polarity Onsemi - 28X8017 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Npn, 100V, 3A/to252; Transistor Polarity Onsemi
28X8017
Transistor, Bipolar, Npn, 100V, 3A/to252; Transistor Polarity Onsemi 28X8017
TRANSISTOR, BIPOLAR, NPN, 100V, 3A/TO252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, NPN, 100V, 3A/TO252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD31CG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NJVMJD31CG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NJVMJD31CG
TRANS NPN 100V 3A DPAK

TRANS NPN 100V 3A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NJVMJD31CG
Bipolar Transistors - BJT NJVMJD31CG
Bipolar Transistors - BJT BIP DPAK NPN 3A 100V

Bipolar Transistors - BJT BIP DPAK NPN 3A 100V

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Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1216339-NJVMJD31CG NJVMJD31CGOS-ND 28X8017 NJVMJD31CG NJVMJD31CG
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Transistor, Bipolar, Npn, 100V, 3A/to252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN
Package Type SOT3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps
Power Gain 10 dB
Operating Frequency 3 MHz
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