onsemi 5.0 A 25 V DPAK Bipolar Transistor NJVMJD210T4G

Description
5.0 A, 25 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD210T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.0 A, 25 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 5.0 A, 25 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD210T4G can be used for catalog matching and distributor lookup.
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1325680-NJVMJD210T4G - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 488-NJVMJD210T4GCT-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 488-NJVMJD210T4GTR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 488-NJVMJD210T4GDKR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - NJVMJD210T4G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD210T4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
5.0 A, 25 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD210T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.0 A, 25 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 5.0 A, 25 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD210T4G can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The 1325680-NJVMJD210T4G is a PNP bipolar junction transistor (BJT) designed for surface mount applications, specifically in low voltage, low-power, high-gain audio amplifier circuits. It features a maximum collector-emitter voltage of 25 V and a continuous collector current rating of 5 A, with a peak collector current of 10 A. The transistor exhibits a low collector-emitter saturation voltage, with a maximum of 1.8 V at 5 A, and a minimum DC current gain (hFE) of 45 at 2 A and 1 V. This device is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards. The operating temperature range is from -65°C to +150°C, ensuring reliability in various environmental conditions. The transistor is packaged in a DPAK case, which is suitable for surface mounting. Its high current-gain-bandwidth product of 65 MHz allows for effective performance in high-frequency applications. Engineers considering this product should note its thermal resistance characteristics, with a junction-to-case thermal resistance of 10°C/W and a junction-to-ambient thermal resistance of 89.3°C/W, which may influence thermal management in their designs.

Datasheet Summary
Powered by GS/AI

The 1325680-NJVMJD210T4G is a PNP bipolar junction transistor (BJT) designed for surface mount applications, specifically in low voltage, low-power, high-gain audio amplifier circuits. It features a maximum collector-emitter voltage of 25 V and a continuous collector current rating of 5 A, with a peak collector current of 10 A. The transistor exhibits a low collector-emitter saturation voltage, with a maximum of 1.8 V at 5 A, and a minimum DC current gain (hFE) of 45 at 2 A and 1 V. This device is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards. The operating temperature range is from -65°C to +150°C, ensuring reliability in various environmental conditions. The transistor is packaged in a DPAK case, which is suitable for surface mounting. Its high current-gain-bandwidth product of 65 MHz allows for effective performance in high-frequency applications. Engineers considering this product should note its thermal resistance characteristics, with a junction-to-case thermal resistance of 10°C/W and a junction-to-ambient thermal resistance of 89.3°C/W, which may influence thermal management in their designs.

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
5.0 A 25 V DPAK Bipolar Transistor
276-NJVMJD210T4G
5.0 A 25 V DPAK Bipolar Transistor 276-NJVMJD210T4G
5.0 A, 25 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD210T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.0 A, 25 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 5.0 A, 25 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD210T4G can be used for catalog matching and distributor lookup.

5.0 A, 25 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD210T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.0 A, 25 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 5.0 A, 25 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD210T4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1325680-NJVMJD210T4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1325680-NJVMJD210T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1325680-NJVMJD210T4G
Manufacturer: onsemi Win Source Part Number: 1325680-NJVMJD210T4G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Power - Max: 1.4 W Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 5 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 79 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Other Part Number: 2156-NJVMJD210T4G-OS ,ONSONSNJVMJD210T4G Base Product Number: NJVMJD210 RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1325680-NJVMJD210T4G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: 2156-NJVMJD210T4G-OS,ONSONSNJVMJD210T4G
Base Product Number: NJVMJD210
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD210T4GCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD210T4GCT-ND
Single Bipolar Transistors 488-NJVMJD210T4GCT-ND
TRANS PNP 25V 5A DPAK

TRANS PNP 25V 5A DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD210T4GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD210T4GTR-ND
Single Bipolar Transistors 488-NJVMJD210T4GTR-ND
Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.4W Surface Mount DPAK

Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.4W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - 488-NJVMJD210T4GDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-NJVMJD210T4GDKR-ND
Single Bipolar Transistors 488-NJVMJD210T4GDKR-ND
TRANS PNP 25V 5A DPAK

TRANS PNP 25V 5A DPAK

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NJVMJD210T4G
Bipolar Transistors - BJT NJVMJD210T4G
Bipolar Transistors - BJT BIP DPAK PNP 5A 25V TR

Bipolar Transistors - BJT BIP DPAK PNP 5A 25V TR

Buy Now Datasheet
Single Bipolar Transistors - NJVMJD210T4G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
NJVMJD210T4G
Single Bipolar Transistors NJVMJD210T4G
TRANS PNP 25V 5A DPAK

TRANS PNP 25V 5A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJVMJD210T4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NJVMJD210T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NJVMJD210T4G
TRANS PNP 25V 5A DPAK

TRANS PNP 25V 5A DPAK

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 276-NJVMJD210T4G 1325680-NJVMJD210T4G 488-NJVMJD210T4GCT-ND NJVMJD210T4G NJVMJD210T4G NJVMJD210T4G
Product Name 5.0 A 25 V DPAK Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Bipolar Transistors - BJT Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP; PNP
IC(max) 5000 milliamps 5000 milliamps 5000 milliamps 5000 milliamps
VCEO 25 volts 25 volts 25 volts
VCBO 40 volts
fT 65 MHz
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