The 1325680-NJVMJD210T4G is a PNP bipolar junction transistor (BJT) designed for surface mount applications, specifically in low voltage, low-power, high-gain audio amplifier circuits. It features a maximum collector-emitter voltage of 25 V and a continuous collector current rating of 5 A, with a peak collector current of 10 A. The transistor exhibits a low collector-emitter saturation voltage, with a maximum of 1.8 V at 5 A, and a minimum DC current gain (hFE) of 45 at 2 A and 1 V. This device is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards. The operating temperature range is from -65¬8C to +150¬8C, ensuring reliability in various environmental conditions. The transistor is packaged in a DPAK case, which is suitable for surface mounting. Its high current-gain-bandwidth product of 65 MHz allows for effective performance in high-frequency applications. Engineers considering this product should note its thermal resistance characteristics, with a junction-to-case thermal resistance of 10¬8C/W and a junction-to-ambient thermal resistance of 89.3¬8C/W, which may influence thermal management in their designs.
5.0 A, 25 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD210T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.0 A, 25 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 5.0 A, 25 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD210T4G can be used for catalog matching and distributor lookup.
TRANS PNP 25V 5A DPAK
TRANS PNP 25V 5A DPAK
Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.4W Surface Mount DPAK
TRANS PNP 25V 5A DPAK
Manufacturer: onsemi
Win Source Part Number: 1325680-NJVMJD210T4G
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: 2156-NJVMJD210T4G-OS
Base Product Number: NJVMJD210
RoHS Status: ROHS3 Compliant
TRANS PNP 25V 5A DPAK
Bipolar Transistors - BJT BIP DPAK PNP 5A 25V TR
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-NJVMJD210T4G | NJVMJD210T4G | 488-NJVMJD210T4GCT-ND | 1325680-NJVMJD210T4G | NJVMJD210T4G | NJVMJD210T4G |
| Product Name | 5.0 A 25 V DPAK Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | PNP | PNP; PNP | PNP | PNP | ||
| IC(max) | 5000 milliamps | 5000 milliamps | 5000 milliamps | 5000 milliamps | ||
| VCEO | 25 volts | 25 volts | 25 volts | |||
| VCBO | 40 volts | |||||
| fT | 65 MHz |
