onsemi Single Bipolar Transistors NJVMJD117T4G

Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Win Source Part Number: 968604-NJVMJD117T4G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: PNP - Darlington
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: ONSONSNJVMJD117T4G,2156-NJVMJD117T4G-OS
Base Product Number: NJVMJD117

TRANS PNP DARL 100V 2A DPAK

2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NJVMJD117T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 2.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJVMJD117T4G can be used for catalog matching and distributor lookup.