4A, 350V NPN Darlington Power Transistor, DPAK Product overview: NJD35N04G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A, 350V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4A, 350V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJD35N04G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK
TRANS NPN DARL 350V 4A DPAK
Win Source Part Number: 1278640-NJD35N04G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 75
Mounting: SMD (SMT)
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 90MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: NJD35N04GOS,NJD35N04
Base Product Number: NJD35
Darlington Transistors POWER DARL TRANSIST
TRANS NPN DARL 350V 4A DPAK
BIPOLAR TRANSISTOR, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; DC Collector Current:4A; Power Dissipation Pd:45W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency ft:90MHz RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:90MHz; Power Dissipation Pd:45W; DC Collector Current:4A; DC Current Gain hFE:300hFE; Transistor Case RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Darlington Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 276-NJD35N04G | NJD35N04GOS-ND | NJD35N04G | 1278640-NJD35N04G | NJD35N04G | NJD35N04G | 02M9866 | 82Y7072 |
| Product Name | 4A 350V DPAK Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 350V; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 350V; Transistor Polarity Onsemi |
| Polarity | NPN | NPN | NPN - Darlington; NPN | NPN | NPN | NPN | ||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||||
| VCEO | 100 volts | 350 volts | 350 volts | |||||
| VCBO | 700 volts | |||||||
| PD | 45000 milliwatts | 45000 milliwatts |
