onsemi Single Bipolar Transistors NJD35N04G

Description
TRANS NPN DARL 350V 4A DPAK
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Description
TRANS NPN DARL 350V 4A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - NJD35N04G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
NJD35N04G
Single Bipolar Transistors NJD35N04G
TRANS NPN DARL 350V 4A DPAK

TRANS NPN DARL 350V 4A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1278640-NJD35N04G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1278640-NJD35N04G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1278640-NJD35N04G
Win Source Part Number: 1278640-NJD35N04G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tube Standard Package: 75 Mounting: SMD (SMT) Power - Max: 45 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 4 A Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Frequency - Transition: 90MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Temperature Range - Operating: -65°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: onsemi Other Names: NJD35N04GOS,NJD35N04 G Base Product Number: NJD35

Win Source Part Number: 1278640-NJD35N04G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tube
Standard Package: 75
Mounting: SMD (SMT)
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 90MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: NJD35N04GOS,NJD35N04G
Base Product Number: NJD35

Buy Now Datasheet
Single Bipolar Transistors - NJD35N04GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
NJD35N04GOS-ND
Single Bipolar Transistors NJD35N04GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK

Buy Now Datasheet
Singapore
4A 350V DPAK Bipolar Transistor
276-NJD35N04G
4A 350V DPAK Bipolar Transistor 276-NJD35N04G
4A, 350V NPN Darlington Power Transistor, DPAK Product overview: NJD35N04G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A, 350V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4A, 350V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJD35N04G can be used for catalog matching and distributor lookup.

4A, 350V NPN Darlington Power Transistor, DPAK Product overview: NJD35N04G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4A, 350V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4A, 350V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-NJD35N04G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
NJD35N04G
Darlington Transistors NJD35N04G
Darlington Transistors POWER DARL TRANSIST

Darlington Transistors POWER DARL TRANSIST

Buy Now Datasheet
Bipolar Transistor, Npn, 350V; Transistor Polarity Onsemi - 02M9866 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 350V; Transistor Polarity Onsemi
02M9866
Bipolar Transistor, Npn, 350V; Transistor Polarity Onsemi 02M9866
BIPOLAR TRANSISTOR, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; DC Collector Current:4A; Power Dissipation Pd:45W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency ft:90MHz RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; DC Collector Current:4A; Power Dissipation Pd:45W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency ft:90MHz RoHS Compliant: Yes

Supplier's Site
Transistor, Bipol, Npn, 350V; Transistor Polarity Onsemi - 82Y7072 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Npn, 350V; Transistor Polarity Onsemi
82Y7072
Transistor, Bipol, Npn, 350V; Transistor Polarity Onsemi 82Y7072
TRANSISTOR, BIPOL, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:90MHz; Power Dissipation Pd:45W; DC Collector Current:4A; DC Current Gain hFE:300hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, BIPOL, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:90MHz; Power Dissipation Pd:45W; DC Collector Current:4A; DC Current Gain hFE:300hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NJD35N04G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NJD35N04G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NJD35N04G
TRANS NPN DARL 350V 4A DPAK

TRANS NPN DARL 350V 4A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Darlington Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number NJD35N04G 1278640-NJD35N04G NJD35N04GOS-ND 276-NJD35N04G NJD35N04G 02M9866 82Y7072 NJD35N04G
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors 4A 350V DPAK Bipolar Transistor Darlington Transistors Bipolar Transistor, Npn, 350V; Transistor Polarity Onsemi Transistor, Bipol, Npn, 350V; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN - Darlington; NPN NPN NPN NPN NPN NPN
Package Type TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3 TO-3
IC(max) 4000 milliamps 4000 milliamps 4000 milliamps 4000 milliamps
VCEO 350 volts 100 volts 350 volts
Operating Frequency 90 MHz
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