onsemi FET, MOSFET Arrays NIMD6001NR2G

Description
MOSFET DRIVER 60 V, 3.3 A 130 MO
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Description
MOSFET DRIVER 60 V, 3.3 A 130 MO
Request a Quote
Datasheet
Datasheet Summary
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The NIMD6001NR2G is a dual low-side MOSFET driver with 60 V breakdown voltage, 3.3 A continuous current, and 130 mΩ maximum RDS(on) at VGS=10 V, housed in an SOIC-8 package. It features a shared disable input, drain-source voltage diagnostic output, electrically isolated drains, and internal gate current limiting resistors. The device is AEC-Q101 qualified and rated for operation up to 150 °C junction temperature. It is supplied in a tape and reel packaging of 2500 units per reel.

Datasheet Summary
Powered by GS/AI

The NIMD6001NR2G is a dual low-side MOSFET driver with 60 V breakdown voltage, 3.3 A continuous current, and 130 mΩ maximum RDS(on) at VGS=10 V, housed in an SOIC-8 package. It features a shared disable input, drain-source voltage diagnostic output, electrically isolated drains, and internal gate current limiting resistors. The device is AEC-Q101 qualified and rated for operation up to 150 °C junction temperature. It is supplied in a tape and reel packaging of 2500 units per reel.

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - 488-NIMD6001NR2G-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
488-NIMD6001NR2G-ND
FET, MOSFET Arrays 488-NIMD6001NR2G-ND
MOSFET DRIVER 60 V, 3.3 A 130 MO

MOSFET DRIVER 60 V, 3.3 A 130 MO

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 488-NIMD6001NR2G-ND
Product Name FET, MOSFET Arrays
Package Type "8-SOIC (0.154"", 3.90mm Width)"
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