onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NID9N05ACLT4G NID9N05ACLT4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083005-NID9N05ACLT4 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.74W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 12V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 52V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 100μA Max Gate Charge: 7nC @ 4.5V Max Input Capacitance: 250pF @ 40V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 90 mOhm @ 9A, 12V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NID9N05ACLT4G - 1083005-NID9N05ACLT4G - Win Source Electronics
    Win Source Electronics
  • Mosfet Transistor, N Channel, 9 A, 55 V, 0.09 Ohm, 12 V, 1.75 V Rohs Compliant Onsemi - 05W5645 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083005-NID9N05ACLT4 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.74W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 12V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 52V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 100μA Max Gate Charge: 7nC @ 4.5V Max Input Capacitance: 250pF @ 40V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 90 mOhm @ 9A, 12V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NID9N05ACLT4G - 1083005-NID9N05ACLT4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NID9N05ACLT4G
1083005-NID9N05ACLT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NID9N05ACLT4G 1083005-NID9N05ACLT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083005-NID9N05ACLT4 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.74W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 12V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 52V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 100μA Max Gate Charge: 7nC @ 4.5V Max Input Capacitance: 250pF @ 40V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 90 mOhm @ 9A, 12V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083005-NID9N05ACLT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.74W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 12V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 52V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 100μA
Max Gate Charge: 7nC @ 4.5V
Max Input Capacitance: 250pF @ 40V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 90 mOhm @ 9A, 12V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet Transistor, N Channel, 9 A, 55 V, 0.09 Ohm, 12 V, 1.75 V Rohs Compliant Onsemi - 05W5645 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 9 A, 55 V, 0.09 Ohm, 12 V, 1.75 V Rohs Compliant Onsemi
05W5645
Mosfet Transistor, N Channel, 9 A, 55 V, 0.09 Ohm, 12 V, 1.75 V Rohs Compliant Onsemi 05W5645
MOSFET Transistor, N Channel, 9 A, 55 V, 0.09 ohm, 12 V, 1.75 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 9 A, 55 V, 0.09 ohm, 12 V, 1.75 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NID9N05ACLT4G
MOSFET NID9N05ACLT4G
MOSFET 9 A, 52 V, N-CHANNEL, LOG

MOSFET 9 A, 52 V, N-CHANNEL, LOG

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1083005-NID9N05ACLT4G 05W5645 NID9N05ACLT4G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NID9N05ACLT4G Mosfet Transistor, N Channel, 9 A, 55 V, 0.09 Ohm, 12 V, 1.75 V Rohs Compliant Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 52 volts
PD 1740 milliwatts
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