MOSFET N-CH 60V 2.8A SOT223-4
N-Channel 60V 2.8A (Ta) 3W (Ta) Surface Mount SOT-223-4
N-Channel 60V 2.8A (Ta) 3W (Ta) Surface Mount SOT-223-4
N-Channel 60V 2.8A (Ta) 3W (Ta) Surface Mount SOT-223-4
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025177-NDT014L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Family Name: NDT014L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 214pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 3.4A, 10V
Alternative Parts (Cross-Reference): STN3NF06L; STN3NF06; STN4NF06L; 2SK2796(L);
Introduction Date: March 03, 1998
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Quantity per package: 4k pcs
MOSFET N-CH 60V 2.8A SOT223-4
MOSFET N-Ch LL FET Enhancement Mode
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:3W RoHS Compliant: Yes
MOSFET Transistor, N Channel, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 8061255P | 8061255 | NDT014L | NDT014LDKR-ND | 025177-NDT014L | NDT014L | NDT014L | 67R2130 | 34X1292 |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDT014L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet; Channel Type Onsemi | Mosfet Transistor, N Channel, 2.8 A, 60 V, 0.12 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi |
| Package Type | SOT223; SOT-223 | SOT223; Sot-223 | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223-4 | TO-261-4, TO-261AA | TO-3 | TO-3 | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 1 | ||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
