50V 2A Dual N-Channel MOSFET SOIC 300mR Surface Mount Product overview: NDS9959 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, SMD, 50V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 50V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NDS9959 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 100279-NDS9959
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Rds On at Id,Vgs: 300 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 50V 2A 900mW Surface Mount 8-SOIC
MOSFET 2N-CH 50V 2A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 289-NDS9959 | 100279-NDS9959 | NDS9959TR-ND | NDS9959 |
| Product Name | N-Channel Dual SMD 50V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9959 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 900 milliwatts | 900 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
