onsemi FET, MOSFET Arrays NDS9956A

Description
MOSFET 2N-CH 30V 3.7A 8-SOIC
Request a Quote Datasheet
Description
MOSFET 2N-CH 30V 3.7A 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NDS9956A - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NDS9956A
FET, MOSFET Arrays NDS9956A
MOSFET 2N-CH 30V 3.7A 8-SOIC

MOSFET 2N-CH 30V 3.7A 8-SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - NDS9956ATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NDS9956ATR-ND
FET, MOSFET Arrays NDS9956ATR-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.7A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 3.7A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9956A - 101974-NDS9956A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9956A
101974-NDS9956A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9956A 101974-NDS9956A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 101974-NDS9956A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.7A Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 320pF @ 10V Maximum Rds On at Id,Vgs: 80 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 101974-NDS9956A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.7A
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 320pF @ 10V
Maximum Rds On at Id,Vgs: 80 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS9956A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS9956A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS9956A
MOSFET 2N-CH 30V 3.7A 8SOIC

MOSFET 2N-CH 30V 3.7A 8SOIC

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDS9956A NDS9956ATR-ND 101974-NDS9956A NDS9956A
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9956A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 3700 milliamps
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