onsemi MOSFETs NDS9945

Description
MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8
Request a Quote Datasheet
Description
MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 9034374P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9034374P
MOSFETs 9034374P
MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8

MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8

Supplier's Site
MOSFETs - 9034374 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9034374
MOSFETs 9034374
MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8

MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8

Supplier's Site
MOSFETs - 1663245 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1663245
MOSFETs 1663245
MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8

MOSFET Dual N-Ch 60V 3.5A Enhanc. SOIC8

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9945 - 025173-NDS9945 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9945
025173-NDS9945
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9945 025173-NDS9945
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 025173-NDS9945 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 345pF @ 25V Maximum Rds On at Id,Vgs: 100 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Application Field: Used in Motor Drive & Control, Power Management, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025173-NDS9945
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 345pF @ 25V
Maximum Rds On at Id,Vgs: 100 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Application Field: Used in Motor Drive & Control, Power Management, Industrial
Quantity per package: 2,500

Buy Now Datasheet
FET, MOSFET Arrays - 488-NDS9945CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
488-NDS9945CT-ND
FET, MOSFET Arrays 488-NDS9945CT-ND
Mosfet Array 2 N-Channel (Dual) 60V 3.5A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 3.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - 488-NDS9945TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
488-NDS9945TR-ND
FET, MOSFET Arrays 488-NDS9945TR-ND
Mosfet Array 2 N-Channel (Dual) 60V 3.5A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 3.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - 488-NDS9945DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
488-NDS9945DKR-ND
FET, MOSFET Arrays 488-NDS9945DKR-ND
MOSFET 2N-CH 60V 3.5A 8SOIC

MOSFET 2N-CH 60V 3.5A 8SOIC

Buy Now Datasheet
Transistor - 16126460 - Radwell International
Willingboro, NJ, United States
Transistor
16126460
Transistor 16126460
MOSFET, N CHANNEL, 60V, 3.5A, SOIC-8; TRANSISTOR POLARITY:DUAL N CHANNEL; CONTINUOUS DRAIN CURRENT ID:3.5A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.076OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:1.7V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CHANNEL, 60V, 3.5A, SOIC-8; TRANSISTOR POLARITY:DUAL N CHANNEL; CONTINUOUS DRAIN CURRENT ID:3.5A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.076OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:1.7V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
FET, MOSFET Arrays - NDS9945 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NDS9945
FET, MOSFET Arrays NDS9945
MOSFET 2N-CH 60V 3.5A 8-SOIC

MOSFET 2N-CH 60V 3.5A 8-SOIC

Supplier's Site Datasheet
Dual N Channel Mosfet, 60V, Soic; Transistor Polarity Onsemi - 03H3057 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 60V, Soic; Transistor Polarity Onsemi
03H3057
Dual N Channel Mosfet, 60V, Soic; Transistor Polarity Onsemi 03H3057
DUAL N CHANNEL MOSFET, 60V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 60V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 60V, 3.5A, Soic-8; Transistor Polarity Onsemi - 29X6827 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 3.5A, Soic-8; Transistor Polarity Onsemi
29X6827
Mosfet, N Channel, 60V, 3.5A, Soic-8; Transistor Polarity Onsemi 29X6827
MOSFET, N CHANNEL, 60V, 3.5A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.076ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 3.5A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.076ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS9945 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS9945
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS9945
MOSFET 2N-CH 60V 3.5A 8SOIC

MOSFET 2N-CH 60V 3.5A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
NDS9945
MOSFET NDS9945
MOSFET Dl N-Ch Enhancement

MOSFET Dl N-Ch Enhancement

Buy Now Datasheet

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey Radwell International ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 9034374P 9034374 025173-NDS9945 488-NDS9945CT-ND 16126460 NDS9945 03H3057 29X6827 NDS9945 NDS9945
Product Name MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9945 FET, MOSFET Arrays Transistor FET, MOSFET Arrays Dual N Channel Mosfet, 60V, Soic; Transistor Polarity Onsemi Mosfet, N Channel, 60V, 3.5A, Soic-8; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type SOIC Soic SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3 TO-3 8-SOIC (0.154, 3.90mm Width)
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
MOSFET Operating Mode Enhancement
Number of units in IC 2
V(BR)DSS 60 volts 60 volts
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