onsemi Single FETs, MOSFETs NDS9430A

Description
P-Channel 20V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 20V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - NDS9430A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS9430A-ND
Single FETs, MOSFETs NDS9430A-ND
P-Channel 20V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 20V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430A - 060153-NDS9430A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430A
060153-NDS9430A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430A 060153-NDS9430A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 060153-NDS9430A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 950pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 5.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 060153-NDS9430A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 950pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 5.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS9430A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS9430A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS9430A
MOSFET P-CH 20V 5.3A 8SOIC

MOSFET P-CH 20V 5.3A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDS9430A-ND 060153-NDS9430A NDS9430A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 20 volts
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