onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9407 NDS9407

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 025172-NDS9407 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: NDS9407 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 732pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): ZXMP6A17N8TC; STS3P6F6; BSO613SPVNT; BSO613SPV; Introduction Date: June 25, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 2,500
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 025172-NDS9407 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: NDS9407 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 732pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): ZXMP6A17N8TC; STS3P6F6; BSO613SPVNT; BSO613SPV; Introduction Date: June 25, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9407 - 025172-NDS9407 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9407
025172-NDS9407
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9407 025172-NDS9407
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 025172-NDS9407 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: NDS9407 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 732pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): ZXMP6A17N8TC; STS3P6F6; BSO613SPVNT; BSO613SPV; Introduction Date: June 25, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025172-NDS9407
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: NDS9407
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 732pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): ZXMP6A17N8TC; STS3P6F6; BSO613SPVNT; BSO613SPV;
Introduction Date: June 25, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500

Buy Now Datasheet
Transistor - 16126452 - Radwell International
Willingboro, NJ, United States
Transistor
16126452
Transistor 16126452
(PRICE/TC),P CHANNEL MOSFET, -60V, -3A, SOIC, TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:3A, DRAIN SOURCE VOLTAGE VDS:-60V, ON RESISTANCE RDS(ON):0.15OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-1.6V, POWER ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC),P CHANNEL MOSFET, -60V, -3A, SOIC, TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:3A, DRAIN SOURCE VOLTAGE VDS:-60V, ON RESISTANCE RDS(ON):0.15OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-1.6V, POWER ROHS COMPLIANT: YE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - NDS9407CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS9407CT-ND
Single FETs, MOSFETs NDS9407CT-ND
P-Channel 60V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 60V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - NDS9407DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS9407DKR-ND
Single FETs, MOSFETs NDS9407DKR-ND
P-Channel 60V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 60V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - NDS9407TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS9407TR-ND
Single FETs, MOSFETs NDS9407TR-ND
P-Channel 60V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 60V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
P Channel Mosfet, -60V, -3A, Soic; Channel Type Onsemi - 78K6109 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, -3A, Soic; Channel Type Onsemi
78K6109
P Channel Mosfet, -60V, -3A, Soic; Channel Type Onsemi 78K6109
P CHANNEL MOSFET, -60V, -3A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, -3A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -60V, -3A, Soic, Full Reel; Channel Type Onsemi - 67R2128 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, -3A, Soic, Full Reel; Channel Type Onsemi
67R2128
P Channel Mosfet, -60V, -3A, Soic, Full Reel; Channel Type Onsemi 67R2128
P CHANNEL MOSFET, -60V, -3A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, -3A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
NDS9407
MOSFET NDS9407
MOSFET Single P-Ch MOSFET Power Trench

MOSFET Single P-Ch MOSFET Power Trench

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 025172-NDS9407 16126452 NDS9407CT-ND 78K6109 NDS9407
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9407 Transistor Single FETs, MOSFETs P Channel Mosfet, -60V, -3A, Soic; Channel Type Onsemi MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 60 volts
PD 2500 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data

Similar Products

DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor - QPD1013 - Qorvo
Specs
Transistor Technology / Material DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type DFN
View Details
Single FETs, MOSFETs - 94-4796-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
View Details
2 suppliers
GaAs Fet Switches - KS206 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details