onsemi Single FETs, MOSFETs NDS9400A

Description
P-Channel 30V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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Description
P-Channel 30V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - NDS9400ATR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS9400ATR-ND
Single FETs, MOSFETs NDS9400ATR-ND
P-Channel 30V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - NDS9400A - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDS9400A
Single FETs, MOSFETs NDS9400A
MOSFET P-CH 30V 3.4A 8SOIC

MOSFET P-CH 30V 3.4A 8SOIC

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9400A - 122100-NDS9400A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9400A
122100-NDS9400A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9400A 122100-NDS9400A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 122100-NDS9400A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.4A (Ta) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 350pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 130 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 122100-NDS9400A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 350pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS9400A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS9400A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS9400A
MOSFET P-CH 30V 3.4A 8SOIC

MOSFET P-CH 30V 3.4A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDS9400ATR-ND NDS9400A 122100-NDS9400A NDS9400A
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9400A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO -55degC ~ 150degC (TJ)
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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