MOSFET P-CH 30V 7A 8-SOIC Product overview: NDS8435 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDS8435 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 251793-NDS8435
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics
P-Channel 30V 7A (Ta) Surface Mount 8-SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 278-NDS8435 | 251793-NDS8435 | NDS8435TR-ND |
| Product Name | 30V 7A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8435 | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel |
| PD | 2500 milliwatts | 2500 milliwatts | |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |