onsemi Single FETs, MOSFETs NDS8425

Description
MOSFET N-CH 20V 7.4A 8SOIC
Request a Quote Datasheet
Description
MOSFET N-CH 20V 7.4A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NDS8425 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDS8425
Single FETs, MOSFETs NDS8425
MOSFET N-CH 20V 7.4A 8SOIC

MOSFET N-CH 20V 7.4A 8SOIC

Supplier's Site Datasheet
Single FETs, MOSFETs - NDS8425FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS8425FSTR-ND
Single FETs, MOSFETs NDS8425FSTR-ND
N-Channel 20V 7.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 20V 7.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8425 - 025170-NDS8425 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8425
025170-NDS8425
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8425 025170-NDS8425
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 025170-NDS8425 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.4A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1098pF @ 15V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22 mOhm @ 7.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025170-NDS8425
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.4A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1098pF @ 15V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
NDS8425
MOSFET NDS8425
MOSFET N-Channel MOSFET 2.5V Specified

MOSFET N-Channel MOSFET 2.5V Specified

Buy Now Datasheet
N Channel Mosfet, 20V, 7.4A, Soic; Channel Type Onsemi - 34C1620 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 7.4A, Soic; Channel Type Onsemi
34C1620
N Channel Mosfet, 20V, 7.4A, Soic; Channel Type Onsemi 34C1620
N CHANNEL MOSFET, 20V, 7.4A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:890mV RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 7.4A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:890mV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NDS8425 NDS8425FSTR-ND 025170-NDS8425 NDS8425 34C1620
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8425 MOSFET N Channel Mosfet, 20V, 7.4A, Soic; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 7400 milliamps 7400 milliamps
Unlock Full Specs
to access all available technical data