P-Channel JFET, -30V, 1.1A, 200mR, SOT-23, Tape & Reel Product overview: NDS356AP from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V, 1.1A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 1.1A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDS356AP can be used for catalog matching and distributor lookup.
P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFET P-CH 30V 1.1A SUPERSOT3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025168-NDS356AP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: NDS356AP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 4.4nC @ 5V
Max Input Capacitance: 280pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1.3A, 10V
Alternative Parts (Cross-Reference): UTR4502G-AE3-R; UTR4502G-AE2-R; Si2303BDS; SI2303BDS-T1-GE3;
Introduction Date: September 01, 1996
ECCN: EAR99
Country of Origin: Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package: 3k pcs
MOSFET P-CH 30V 1.1A SUPERSOT3
P CHANNEL MOSFET, -30V, 1.1A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NDS356AP | NDS356APTR-ND | NDS356AP | 025168-NDS356AP | NDS356AP | 58K2019 |
| Product Name | P-Channel -30V 1.1A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS356AP | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -30V, 1.1A Super Sot-3; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SuperSOT-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT3 |
