onsemi Single FETs, MOSFETs NDS356AP

Description
MOSFET P-CH 30V 1.1A SUPERSOT3
Request a Quote Datasheet
Description
MOSFET P-CH 30V 1.1A SUPERSOT3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NDS356AP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDS356AP
Single FETs, MOSFETs NDS356AP
MOSFET P-CH 30V 1.1A SUPERSOT3

MOSFET P-CH 30V 1.1A SUPERSOT3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS356AP - 025168-NDS356AP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS356AP
025168-NDS356AP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS356AP 025168-NDS356AP
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 025168-NDS356AP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Family Name: NDS356AP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4.4nC @ 5V Max Input Capacitance: 280pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 1.3A, 10V Alternative Parts (Cross-Reference): UTR4502G-AE3-R; UTR4502G-AE2-R; Si2303BDS; SI2303BDS-T1-GE3; Introduction Date: September 01, 1996 ECCN: EAR99 Country of Origin: Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025168-NDS356AP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: NDS356AP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 4.4nC @ 5V
Max Input Capacitance: 280pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1.3A, 10V
Alternative Parts (Cross-Reference): UTR4502G-AE3-R; UTR4502G-AE2-R; Si2303BDS; SI2303BDS-T1-GE3;
Introduction Date: September 01, 1996
ECCN: EAR99
Country of Origin: Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - NDS356APTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS356APTR-ND
Single FETs, MOSFETs NDS356APTR-ND
P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
P Channel Mosfet, -30V, 1.1A Super Sot-3; Channel Type Onsemi - 58K2019 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 1.1A Super Sot-3; Channel Type Onsemi
58K2019
P Channel Mosfet, -30V, 1.1A Super Sot-3; Channel Type Onsemi 58K2019
P CHANNEL MOSFET, -30V, 1.1A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 1.1A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS356AP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS356AP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS356AP
MOSFET P-CH 30V 1.1A SUPERSOT3

MOSFET P-CH 30V 1.1A SUPERSOT3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDS356AP 025168-NDS356AP NDS356APTR-ND 58K2019 NDS356AP
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS356AP Single FETs, MOSFETs P Channel Mosfet, -30V, 1.1A Super Sot-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 1100 milliamps 1100 milliamps
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