onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS352P NDS352P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 096918-NDS352P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 850mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4nC @ 5V Max Input Capacitance: 125pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 350 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 096918-NDS352P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 850mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4nC @ 5V Max Input Capacitance: 125pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 350 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS352P - 096918-NDS352P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS352P
096918-NDS352P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS352P 096918-NDS352P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 096918-NDS352P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 850mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4nC @ 5V Max Input Capacitance: 125pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 350 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics, Computers & Computer Peripherals

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 096918-NDS352P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 850mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 4nC @ 5V
Max Input Capacitance: 125pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 350 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics, Computers & Computer Peripherals

Buy Now Datasheet
Single FETs, MOSFETs - NDS352PTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS352PTR-ND
Single FETs, MOSFETs NDS352PTR-ND
P-Channel 20V 850mA (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 20V 850mA (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS352P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS352P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS352P
MOSFET P-CH 20V 850MA SUPERSOT3

MOSFET P-CH 20V 850MA SUPERSOT3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 096918-NDS352P NDS352PTR-ND NDS352P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS352P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 500 milliwatts
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