onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS351N NDS351N

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025164-NDS351N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 3.5nC @ 5V
Max Input Capacitance: 140pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

N-Channel JFET, 30V, 1.1A, 160mΩ, TO-236-3, SMT Product overview: NDS351N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 1.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDS351N can be used for catalog matching and distributor lookup.

N-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3