onsemi Single FETs, MOSFETs NDP7061

Description
N-Channel 60V 64A (Tc) 130W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 60V 64A (Tc) 130W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NDP7061-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDP7061-ND
Single FETs, MOSFETs NDP7061-ND
N-Channel 60V 64A (Tc) 130W (Tc) Through Hole TO-220-3

N-Channel 60V 64A (Tc) 130W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP7061 - 041907-NDP7061 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP7061
041907-NDP7061
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP7061 041907-NDP7061
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 041907-NDP7061 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 64A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 1930pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 041907-NDP7061
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 64A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 1930pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDP7061 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDP7061
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDP7061
MOSFET N-CH 60V 64A TO220-3

MOSFET N-CH 60V 64A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDP7061-ND 041907-NDP7061 NDP7061
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP7061 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
V(BR)DSS 60 volts
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