Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 025157-NDP6060L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 60nC @ 5V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 20 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-220-3
MOSFETs N-Ch LL FET Enhancement Mode Product overview: NDP6060L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-NDP6060L can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 48A TO220-3
MOSFET N-Ch LL FET Enhancement Mode
N CHANNEL MOSFET, 60V, 48A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:48A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 48A, TO-220; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:48A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.025OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:2V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 025157-NDP6060L | NDP6060L-ND | 2088-NDP6060L | NDP6060L | NDP6060L | 58K2013 | 16147430 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6060L | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 48A, To-220; Channel Type Onsemi | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | ||||||
| PD | 100000 milliwatts | 100 milliwatts | |||||
| TJ | -65 to 175 C (-85 to 347 F) |
