onsemi Single FETs, MOSFETs NDP603AL

Description
N-Channel 30V 25A (Tc) 50W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 30V 25A (Tc) 50W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NDP603AL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDP603AL-ND
Single FETs, MOSFETs NDP603AL-ND
N-Channel 30V 25A (Tc) 50W (Tc) Through Hole TO-220-3

N-Channel 30V 25A (Tc) 50W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP603AL - 209145-NDP603AL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP603AL
209145-NDP603AL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP603AL 209145-NDP603AL
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 209145-NDP603AL Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1100pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 209145-NDP603AL
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1100pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDP603AL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDP603AL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDP603AL
MOSFET N-CH 30V 25A TO220-3

MOSFET N-CH 30V 25A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NDP603AL-ND 209145-NDP603AL NDP603AL
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP603AL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 94-4737-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
View Details
2 suppliers
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1317T - 855026-2SA1317T - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details