Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 060146-NDP6020P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 35nC @ 5V
Max Input Capacitance: 1590pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Quantity per package: 800
P-Channel 20V 24A (Tc) 60W (Tc) Through Hole TO-220-3
MOSFET P-CH 20V 24A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 2
P-Channel MOSFET -20V, -24A, 50mΩ, TO-220AB Product overview: NDP6020P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -20V, -24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDP6020P can be used for catalog matching and distributor lookup.
P CHANNEL MOSFET, -20V, 24A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; MSL:- RoHS Compliant: Yes
MOSFET Transistor, P Channel, 24 A, 20 V, 0.041 ohm, -4.5 V, -700 mV RoHS Compliant: Yes
MOSFET P-Ch LL FET Enhancement Mode
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 060146-NDP6020P | NDP6020P-ND | NDP6020P | 278-NDP6020P | 58K9475 | 03M5118 | NDP6020P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6020P | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel -20V -24A MOSFET Transistor | P Channel Mosfet, -20V, 24A, To-220; Channel Type Onsemi | Mosfet Transistor, P Channel, 24 A, 20 V, 0.041 Ohm, -4.5 V, -700 Mv Rohs Compliant Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 60000 milliwatts | 60000 milliwatts | 60000 milliwatts | ||||
| TJ | -65 to 175 C (-85 to 347 F) | -65 to 175 C (-85 to 347 F) | -55 C (-67 F) |
