onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6020P NDP6020P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 060146-NDP6020P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1590pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6020P - 060146-NDP6020P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NDP6020P-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NDP6020P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - NDP6020P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • P Channel Mosfet, -20V, 24A, To-220; Channel Type Onsemi - 58K9475 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, P Channel, 24 A, 20 V, 0.041 Ohm, -4.5 V, -700 Mv Rohs Compliant Onsemi - 03M5118 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 060146-NDP6020P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1590pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6020P - 060146-NDP6020P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6020P
060146-NDP6020P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6020P 060146-NDP6020P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 060146-NDP6020P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 35nC @ 5V Max Input Capacitance: 1590pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 060146-NDP6020P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 35nC @ 5V
Max Input Capacitance: 1590pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 50 mOhm @ 12A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - NDP6020P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDP6020P-ND
Single FETs, MOSFETs NDP6020P-ND
P-Channel 20V 24A (Tc) 60W (Tc) Through Hole TO-220-3

P-Channel 20V 24A (Tc) 60W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - NDP6020P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDP6020P
Single FETs, MOSFETs NDP6020P
MOSFET P-CH 20V 24A TO220-3

MOSFET P-CH 20V 24A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - NDP6020P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDP6020P
Single FETs, MOSFETs NDP6020P
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
P Channel Mosfet, -20V, 24A, To-220; Channel Type Onsemi - 58K9475 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 24A, To-220; Channel Type Onsemi
58K9475
P Channel Mosfet, -20V, 24A, To-220; Channel Type Onsemi 58K9475
P CHANNEL MOSFET, -20V, 24A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 24A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, P Channel, 24 A, 20 V, 0.041 Ohm, -4.5 V, -700 Mv Rohs Compliant Onsemi - 03M5118 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 24 A, 20 V, 0.041 Ohm, -4.5 V, -700 Mv Rohs Compliant Onsemi
03M5118
Mosfet Transistor, P Channel, 24 A, 20 V, 0.041 Ohm, -4.5 V, -700 Mv Rohs Compliant Onsemi 03M5118
MOSFET Transistor, P Channel, 24 A, 20 V, 0.041 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, 24 A, 20 V, 0.041 ohm, -4.5 V, -700 mV RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NDP6020P
MOSFET NDP6020P
MOSFET P-Ch LL FET Enhancement Mode

MOSFET P-Ch LL FET Enhancement Mode

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060146-NDP6020P NDP6020P-ND NDP6020P 58K9475 03M5118 NDP6020P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDP6020P Single FETs, MOSFETs Single FETs, MOSFETs P Channel Mosfet, -20V, 24A, To-220; Channel Type Onsemi Mosfet Transistor, P Channel, 24 A, 20 V, 0.041 Ohm, -4.5 V, -700 Mv Rohs Compliant Onsemi MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 60000 milliwatts 60000 milliwatts
TJ -65 to 175 C (-85 to 347 F) -65 to 175 C (-85 to 347 F)
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