onsemi Single FETs, MOSFETs NDF04N60ZG

N-Channel 600V 4.8A (Tc) 30W (Tc) Through Hole TO-220FP

Manufacturer: ON Semiconductor
Win Source Part Number: 025154-NDF04N60ZG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

600V N-Channel Power MOSFET, 4.8A, 2 Ohm, TO-220FP Product overview: NDF04N60ZG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 4.8A, 2 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.8A, 2 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDF04N60ZG can be used for catalog matching and distributor lookup.