onsemi N-Channel 600V 8.2A 550mOhm MOSFET Transistor NDD60N550U1T4G

Power MOSFET 600V 8.2A 550mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NDD60N550U1T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 8.2A, 550mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8.2A, 550mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDD60N550U1T4G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1082829-NDD60N550U1T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 94W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 540pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 550 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): STD10N60M2; NDD60N550U1-35G; SPD07N60C3ZT;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

N-Channel 600V 8.2A (Tc) 94W (Tc) Surface Mount DPAK