onsemi Single FETs, MOSFETs NDD04N60ZT4G

N-Channel 600V 4.1A (Tc) 83W (Tc) Surface Mount DPAK

600V 4.1A N-Channel Power MOSFET DPAK 1.8 Ohm Product overview: NDD04N60ZT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 4.1A, 1.8 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.1A, 1.8 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDD04N60ZT4G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 101637-NDD04N60ZT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Family Name: NDD04N60Z
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V
Alternative Parts (Cross-Reference): TK4P60DB; TK4P60DB(T6RDV,Q,S); TK4P60DB(T6RSS-Q);
Introduction Date: June 15, 2009
ECCN: EAR99
Country of Origin: Malaysia, Vietnam
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance