N-Channel 400V 1.7A (Tc) 39W (Tc) Through Hole I-Pak
Win Source Part Number: 1209265-NDD02N40-1G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 75
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): NDD02N401G;
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NDD02N40-1G-ND,NDD02
Base Product Number: NDD02
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 400V 1.7A IPAK
MOSFET, N CHANNEL, 400V, 1.7A, TO-251AA-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):4.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 400V 1.7A IPAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NDD02N40-1GOS-ND | 1209265-NDD02N40-1G | NDD02N40-1G | 72W2255 | NDD02N40-1G |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N Channel, 400V, 1.7A, To-251Aa-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3 | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA |
| PD | 39000 milliwatts | 39000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
