onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NDD02N40-1G

Description
Win Source Part Number: 1209265-NDD02N40-1G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 75 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): NDD02N401G; ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NDD02N40-1G-ND,NDD02 N40-1GOS Base Product Number: NDD02 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1209265-NDD02N40-1G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NDD02N40-1GOS-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NDD02N40-1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDD02N40-1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 400V, 1.7A, To-251Aa-3; Transistor Polarity Onsemi - 72W2255 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1209265-NDD02N40-1G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 75 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): NDD02N401G; ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NDD02N40-1G-ND,NDD02 N40-1GOS Base Product Number: NDD02 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1209265-NDD02N40-1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1209265-NDD02N40-1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1209265-NDD02N40-1G
Win Source Part Number: 1209265-NDD02N40-1G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 75 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 39W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): NDD02N401G; ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NDD02N40-1G-ND,NDD02 N40-1GOS Base Product Number: NDD02 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1209265-NDD02N40-1G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 75
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): NDD02N401G;
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NDD02N40-1G-ND,NDD02N40-1GOS
Base Product Number: NDD02
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - NDD02N40-1GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDD02N40-1GOS-ND
Single FETs, MOSFETs NDD02N40-1GOS-ND
N-Channel 400V 1.7A (Tc) 39W (Tc) Through Hole I-Pak

N-Channel 400V 1.7A (Tc) 39W (Tc) Through Hole I-Pak

Buy Now Datasheet
Single FETs, MOSFETs - NDD02N40-1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NDD02N40-1G
Single FETs, MOSFETs NDD02N40-1G
MOSFET N-CH 400V 1.7A IPAK

MOSFET N-CH 400V 1.7A IPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDD02N40-1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDD02N40-1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDD02N40-1G
MOSFET N-CH 400V 1.7A IPAK

MOSFET N-CH 400V 1.7A IPAK

Supplier's Site
Mosfet, N Channel, 400V, 1.7A, To-251Aa-3; Transistor Polarity Onsemi - 72W2255 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 400V, 1.7A, To-251Aa-3; Transistor Polarity Onsemi
72W2255
Mosfet, N Channel, 400V, 1.7A, To-251Aa-3; Transistor Polarity Onsemi 72W2255
MOSFET, N CHANNEL, 400V, 1.7A, TO-251AA-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):4.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N CHANNEL, 400V, 1.7A, TO-251AA-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):4.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1209265-NDD02N40-1G NDD02N40-1GOS-ND NDD02N40-1G NDD02N40-1G 72W2255
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 400V, 1.7A, To-251Aa-3; Transistor Polarity Onsemi
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
PD 39000 milliwatts 39000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
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