onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD01N60-1G NDD01N60-1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1082823-NDD01N60-1G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 3.7V @ 50μA Max Gate Charge: 7.2nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8.5 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD01N60-1G - 1082823-NDD01N60-1G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NDD01N60-1G-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDD01N60-1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1082823-NDD01N60-1G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 3.7V @ 50μA Max Gate Charge: 7.2nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8.5 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD01N60-1G - 1082823-NDD01N60-1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD01N60-1G
1082823-NDD01N60-1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD01N60-1G 1082823-NDD01N60-1G
Manufacturer: ON Semiconductor Win Source Part Number: 1082823-NDD01N60-1G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 3.7V @ 50μA Max Gate Charge: 7.2nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 8.5 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1082823-NDD01N60-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 3.7V @ 50μA
Max Gate Charge: 7.2nC @ 10V
Max Input Capacitance: 160pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 8.5 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NDD01N60-1G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDD01N60-1G-ND
Single FETs, MOSFETs NDD01N60-1G-ND
N-Channel 600V 1.5A (Tc) 46W (Tc) Through Hole I-Pak

N-Channel 600V 1.5A (Tc) 46W (Tc) Through Hole I-Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDD01N60-1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDD01N60-1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDD01N60-1G
MOSFET N-CH 600V 1.5A IPAK

MOSFET N-CH 600V 1.5A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1082823-NDD01N60-1G NDD01N60-1G-ND NDD01N60-1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDD01N60-1G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 46000 milliwatts
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