60V 48A N-Channel MOSFET, 25mΩ, TO-263AB, Logic Level Product overview: NDB6060L from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NDB6060L can be used for catalog matching and distributor lookup.
N-Channel 60V 48A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 141588-NDB6060L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 60nC @ 5V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 20 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET, N CHANNEL, 60V, 48A, TO-263AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:48A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-Ch LL FET Enhancement Mode
MOSFET N-CH 60V 48A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NDB6060L | NDB6060LTR-ND | 141588-NDB6060L | 29X6825 | NDB6060L | NDB6060L |
| Product Name | N-Channel 60V 48A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDB6060L | Mosfet, N Channel, 60V, 48A, To-263Ab-3; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 100000 milliwatts | 100000 milliwatts | ||||
| TJ | -55 C (-67 F) | -65 to 175 C (-85 to 347 F) | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-3; TO-263 | -65degC ~ 175degC (TJ) |
