The NCV8405ADTRKG is a self-protected low-side smart discrete device in a DPAK package, designed for automotive and industrial applications requiring overcurrent, overtemperature, and overvoltage protection. It features an internally clamped drain-to-source voltage rating of 42 V, a continuous drain current limit of up to 6.0 A, and a typical on-resistance of 90 mΩ at 10 V gate drive. The device supports logic-level gate input and includes integrated drain-to-gate clamping for inductive switching, thermal shutdown with automatic restart, and ESD protection per HBM 4000 V. It is AEC-Q100 qualified and RoHS compliant. The DPAK package has a junction-to-ambient thermal resistance of 60 °C/W with a minimum PCB copper area and is rated for operation from -40 °C to 150 °C junction temperature.
MOSFET, PROTECTED, LSD, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:42V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 05W5638 |
| Product Name | Mosfet, Protected, Lsd, Dpak; Channel Type Onsemi |
| IDSS | 6000 milliamps |