onsemi Mosfet, Protected, Lsd, Dpak; Channel Type Onsemi NCV8405ADTRKG

Description
MOSFET, PROTECTED, LSD, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:42V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Product Range:- RoHS Compliant: Yes
Description
MOSFET, PROTECTED, LSD, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:42V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Product Range:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The NCV8405ADTRKG is a self-protected low-side smart discrete device in a DPAK package, designed for automotive and industrial applications requiring overcurrent, overtemperature, and overvoltage protection. It features an internally clamped drain-to-source voltage rating of 42 V, a continuous drain current limit of up to 6.0 A, and a typical on-resistance of 90 mΩ at 10 V gate drive. The device supports logic-level gate input and includes integrated drain-to-gate clamping for inductive switching, thermal shutdown with automatic restart, and ESD protection per HBM 4000 V. It is AEC-Q100 qualified and RoHS compliant. The DPAK package has a junction-to-ambient thermal resistance of 60 °C/W with a minimum PCB copper area and is rated for operation from -40 °C to 150 °C junction temperature.

Datasheet Summary
Powered by GS/AI

The NCV8405ADTRKG is a self-protected low-side smart discrete device in a DPAK package, designed for automotive and industrial applications requiring overcurrent, overtemperature, and overvoltage protection. It features an internally clamped drain-to-source voltage rating of 42 V, a continuous drain current limit of up to 6.0 A, and a typical on-resistance of 90 mΩ at 10 V gate drive. The device supports logic-level gate input and includes integrated drain-to-gate clamping for inductive switching, thermal shutdown with automatic restart, and ESD protection per HBM 4000 V. It is AEC-Q100 qualified and RoHS compliant. The DPAK package has a junction-to-ambient thermal resistance of 60 °C/W with a minimum PCB copper area and is rated for operation from -40 °C to 150 °C junction temperature.

Suppliers

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Product
Description
Supplier Links
Mosfet, Protected, Lsd, Dpak; Channel Type Onsemi - 05W5638 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Protected, Lsd, Dpak; Channel Type Onsemi
05W5638
Mosfet, Protected, Lsd, Dpak; Channel Type Onsemi 05W5638
MOSFET, PROTECTED, LSD, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:42V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Product Range:- RoHS Compliant: Yes

MOSFET, PROTECTED, LSD, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:42V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 05W5638
Product Name Mosfet, Protected, Lsd, Dpak; Channel Type Onsemi
IDSS 6000 milliamps
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