onsemi MOSFET NCV8402AMNWT1G

Description
MOSFET 165MOHM 2A LOW-SIDE SMAR
Description
MOSFET 165MOHM 2A LOW-SIDE SMAR
Datasheet
Datasheet Summary
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The NCV8402AMNWT1G is an automotive-grade, low-side smart discrete driver with integrated overcurrent, overtemperature, and overvoltage protection, suitable for switching resistive, inductive, and capacitive loads. It is packaged in a DFN6 wettable flank case with dimensions 3.00 mm x 3.00 mm and features a clamp voltage of 42 V, continuous drain current limited to 6.75 A at TS = 25°C, and a typical on-resistance of 165 mΩ at 10 V and 25°C. The device is AEC-Q101 qualified, RoHS compliant, and operates with a junction temperature range of -40°C to 150°C.

Datasheet Summary
Powered by GS/AI

The NCV8402AMNWT1G is an automotive-grade, low-side smart discrete driver with integrated overcurrent, overtemperature, and overvoltage protection, suitable for switching resistive, inductive, and capacitive loads. It is packaged in a DFN6 wettable flank case with dimensions 3.00 mm x 3.00 mm and features a clamp voltage of 42 V, continuous drain current limited to 6.75 A at TS = 25°C, and a typical on-resistance of 165 mΩ at 10 V and 25°C. The device is AEC-Q101 qualified, RoHS compliant, and operates with a junction temperature range of -40°C to 150°C.

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Sheung Wan, Hong Kong
MOSFET 165MOHM 2A LOW-SIDE SMAR

MOSFET 165MOHM 2A LOW-SIDE SMAR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number NCV8402AMNWT1G
Product Name MOSFET
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