onsemi Gate Drivers NCV5183DR2G

The NCV5183DR2G is a high voltage, high current gate driver IC designed for driving N-channel power MOSFETs in half-bridge and other configurations. It operates with a voltage range of up to 600 V and supports a gate drive supply range from 9 V to 18 V. The device features a dual output configuration, allowing for independent control of high-side and low-side MOSFETs, and utilizes a bootstrap technique for high-side driving. This gate driver is automotive qualified to AEC Q100, ensuring reliability in automotive applications. It has a maximum output current capability of 4.3 A for both sourcing and sinking, and is compatible with 3.3 V and 5 V input logic levels. The propagation delay is typically 120 ns, with matched delays between channels, and it includes under-voltage lockout (UVLO) protection for both outputs. The NCV5183DR2G is suitable for various applications, including power supplies for telecom and datacom, half-bridge and full-bridge converters, motor controls, and class-D audio amplifiers. It comes in a Pb-free SOIC-8 package and is pin-to-pin compatible with industry standards, making it a versatile choice for engineers looking for a reliable gate driver solution.