TRANS 7NPN DARL 50V 0.5A 16SOIC
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
50V 500mA NPN Darlington Array, 7-Ch, SOIC-16, 2500/Reel Product overview: NCV1413BDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 500mA, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 500mA, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NCV1413BDR2G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025114-NCV1413BDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 7 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
TRANSISTOR ARRAY, NPN, 50V, SOIC; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No. of Pins:16Pins; RoHS Compliant: Yes
Darlington Transistors High Voltage High Current Darlington
TRANS 7NPN DARL 50V 0.5A 16SOIC
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Darlington Transistors | Bipolar RF Transistors |
| Product Number | NCV1413BDR2G | NCV1413BDR2GOSCT-ND | 277-NCV1413BDR2G | 025114-NCV1413BDR2G | 50AC6363 | NCV1413BDR2G | NCV1413BDR2G |
| Product Name | Bipolar Transistor Arrays | Bipolar Transistor Arrays | 50V 500mA SOIC Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays - NCV1413BDR2G | Transistor Array, Npn, 50V, Soic; Transistor Polarity Onsemi | Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | 7 NPN Darlington; NPN | NPN | NPN | NPN; 7 NPN Darlington | NPN | ||
| Package Type | 16-SOIC (0.154", 3.90mm Width) | "16-SOIC (0.154"", 3.90mm Width)" | SOT3; 16-SOIC | TO-3 | |||
| IC(max) | 500 milliamps | 500 milliamps | 500 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts |
