onsemi Bipolar Transistor Arrays NCV1413BDR2G

Description
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - NCV1413BDR2GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NCV1413BDR2GOSCT-ND
Bipolar Transistor Arrays NCV1413BDR2GOSCT-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - NCV1413BDR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NCV1413BDR2GOSTR-ND
Bipolar Transistor Arrays NCV1413BDR2GOSTR-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - NCV1413BDR2GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NCV1413BDR2GOSDKR-ND
Bipolar Transistor Arrays NCV1413BDR2GOSDKR-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
Singapore, Singapore
50V 500mA SOIC Bipolar Transistor
277-NCV1413BDR2G
50V 500mA SOIC Bipolar Transistor 277-NCV1413BDR2G
50V 500mA NPN Darlington Array, 7-Ch, SOIC-16, 2500/Reel Product overview: NCV1413BDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 500mA, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 500mA, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NCV1413BDR2G can be used for catalog matching and distributor lookup.

50V 500mA NPN Darlington Array, 7-Ch, SOIC-16, 2500/Reel Product overview: NCV1413BDR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 500mA, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 500mA, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NCV1413BDR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - NCV1413BDR2G - 025114-NCV1413BDR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - NCV1413BDR2G
025114-NCV1413BDR2G
TRANSISTORS - Transistors (BJT) - Arrays - NCV1413BDR2G 025114-NCV1413BDR2G
Manufacturer: ON Semiconductor Win Source Part Number: 025114-NCV1413BDR2G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 7 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 025114-NCV1413BDR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 7 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
NCV1413BDR2G
Darlington Transistors NCV1413BDR2G
Darlington Transistors High Voltage High Current Darlington

Darlington Transistors High Voltage High Current Darlington

Buy Now Datasheet
Transistor Array, Npn, 50V, Soic; Transistor Polarity Onsemi - 50AC6363 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Npn, 50V, Soic; Transistor Polarity Onsemi
50AC6363
Transistor Array, Npn, 50V, Soic; Transistor Polarity Onsemi 50AC6363
TRANSISTOR ARRAY, NPN, 50V, SOIC; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No. of Pins:16Pins; RoHS Compliant: Yes

TRANSISTOR ARRAY, NPN, 50V, SOIC; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No. of Pins:16Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NCV1413BDR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NCV1413BDR2G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NCV1413BDR2G
TRANS 7NPN DARL 50V 0.5A 16SOIC

TRANS 7NPN DARL 50V 0.5A 16SOIC

Supplier's Site
Bipolar Transistor Arrays - NCV1413BDR2G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
NCV1413BDR2G
Bipolar Transistor Arrays NCV1413BDR2G
TRANS 7NPN DARL 50V 0.5A 16SOIC

TRANS 7NPN DARL 50V 0.5A 16SOIC

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors Transistors Darlington Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number NCV1413BDR2GOSCT-ND 277-NCV1413BDR2G 025114-NCV1413BDR2G NCV1413BDR2G 50AC6363 NCV1413BDR2G NCV1413BDR2G
Product Name Bipolar Transistor Arrays 50V 500mA SOIC Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays - NCV1413BDR2G Darlington Transistors Transistor Array, Npn, 50V, Soic; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistor Arrays
Polarity NPN NPN NPN; 7 NPN Darlington NPN 7 NPN Darlington; NPN
Package Type "16-SOIC (0.154"", 3.90mm Width)" SOT3; 16-SOIC TO-3 16-SOIC (0.154", 3.90mm Width)
Transistor Grade / Operating Range Automotive
IC(max) 500 milliamps 500 milliamps 500 milliamps
Unlock Full Specs
to access all available technical data