The NCP347MTAFTBG is a positive overvoltage protection controller with an integrated 65 mΩ NMOS FET, designed to protect systems from input voltages up to 28 V. It features an overvoltage lockout threshold of 5.90 V typical, an undervoltage lockout threshold of 2.95 V typical, and a 50 ms startup delay. The device comes in a 10-lead WDFN package measuring 2.5 mm × 2 mm, with an open-drain fault flag output and an enable input. It meets IEC 61000-4-2 ESD protection levels of 15 kV air and 8.0 kV contact when bypassed with a 1.0 µF capacitor, and is Pb-free compliant. Operating ambient temperature ranges from -40°C to +85°C.
Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET and Status Flag OVLO 5.9 V, WDFN10, 2.5x2 mm, 0.5P, 3000-REEL Product overview: NCP347MTAFTBG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.9 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 5.9 V, MOSFET Transistor, Mixed Technology. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 149-NCP347MTAFTBG can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 149-NCP347MTAFTBG |
| Product Name | 5.9 V MOSFET Transistor |
| TJ | -40 C (-40 F) |
