MOSFET N-CH 20V 750MA SOT23-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1081228-MVGSF1N02LT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 750mA (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Input Capacitance: 125pF @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Single N-Channel Power MOSFET 20V, 750mA, 90mΩ MOSFET 20V 750mA 90 mOhm Single N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: MVGSF1N02LT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 750mA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 750mA, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MVGSF1N02LT1G can be used for catalog matching and distributor lookup.
N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 20V 750MA SOT23-3
MOSFET, AEC-Q101, N-CH, 20V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:750mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET NFET SOT23 20V 75MA 90MO
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MVGSF1N02LT1G | 1081228-MVGSF1N02LT1G | 278-MVGSF1N02LT1G | MVGSF1N02LT1GOSTR-ND | MVGSF1N02LT1G | 14AC4591 | MVGSF1N02LT1G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - MVGSF1N02LT1G | N-Channel 20V 750mA SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 20V, Sot-23; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 750 milliamps | 750 milliamps | |||||
| PD | 400 milliwatts | 400 milliwatts | 400 milliwatts |
