onsemi Diode MUR8100E

Description
DISCONTINUED BY MANUFACTURER, RECTIFIER DIODE, AVALANCHE, 1 PHASE, 1 ELEMENT, 8A, 1000V V(RRM), SILICON, TO-220AC. FREE 2 YEAR RADWELL WARRANTY
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Description
DISCONTINUED BY MANUFACTURER, RECTIFIER DIODE, AVALANCHE, 1 PHASE, 1 ELEMENT, 8A, 1000V V(RRM), SILICON, TO-220AC. FREE 2 YEAR RADWELL WARRANTY
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Suppliers

Company
Product
Description
Supplier Links
Diode - 32556152 - Radwell International
Willingboro, NJ, United States
DISCONTINUED BY MANUFACTURER, RECTIFIER DIODE, AVALANCHE, 1 PHASE, 1 ELEMENT, 8A, 1000V V(RRM), SILICON, TO-220AC. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, RECTIFIER DIODE, AVALANCHE, 1 PHASE, 1 ELEMENT, 8A, 1000V V(RRM), SILICON, TO-220AC. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single Diodes - MUR8100EOS-ND - DigiKey
Thief River Falls, MN, United States
Single Diodes
MUR8100EOS-ND
Single Diodes MUR8100EOS-ND
Diode Standard 1000V 8A Through Hole TO-220-2

Diode Standard 1000V 8A Through Hole TO-220-2

Buy Now Datasheet
Diodes, Rectifiers - Single - MUR8100E - 059676-MUR8100E - Win Source Electronics
Laguna Hills, CA, United States
Diodes, Rectifiers - Single - MUR8100E
059676-MUR8100E
Diodes, Rectifiers - Single - MUR8100E 059676-MUR8100E
Manufacturer: ON Semiconductor Win Source Part Number: 059676-MUR8100E Packaging: Tube/Rail Mounting: Through Hole Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V (1kV) Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25μA @ 1000V Operating Temperature - Junction: -65°C to 175°C Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220-2 Speed(Frequency): Fast Recovery = 200mA (Io) Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 059676-MUR8100E
Packaging: Tube/Rail
Mounting: Through Hole
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25μA @ 1000V
Operating Temperature - Junction: -65°C to 175°C
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-220-2
Speed(Frequency): Fast Recovery = 200mA (Io)
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

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Discrete Semiconductor Products - Diodes - Rectifiers - MUR8100E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - Rectifiers
MUR8100E
Discrete Semiconductor Products - Diodes - Rectifiers MUR8100E
DIODE GEN PURP 1KV 8A TO220-2

DIODE GEN PURP 1KV 8A TO220-2

Supplier's Site

Technical Specifications

  Radwell International DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category General Purpose Diodes Diodes Diodes Rectifiers
Product Number 32556152 MUR8100EOS-ND 059676-MUR8100E MUR8100E
Product Name Diode Single Diodes Diodes, Rectifiers - Single - MUR8100E Discrete Semiconductor Products - Diodes - Rectifiers
Tj -65 to 175 C (-85 to 347 F) -65 to 175 C (-85 to 347 F)
Diode Type Standard
VF 1.8 volts 1.8 volts
VR 1000 volts
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