onsemi Digital Transistor Polarity Onsemi MUN5314DW1T1G.

Description
Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:4.7(Ratio) RoHS Compliant: Yes
Description
Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:4.7(Ratio) RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

The MUN5314DW1T1G is a complementary bias resistor transistor in a SOT-363 package, integrating an NPN and PNP transistor with monolithic bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It has a collector-emitter voltage rating of 50 V, continuous collector current of 100 mA, and operates over a junction temperature range of -55°C to +150°C. The device is RoHS compliant, Pb-free, halogen-free, and AEC-Q101 qualified. Thermal resistance junction-to-ambient is 670 °C/W for one junction heated on minimum pad, or 493 °C/W for both junctions heated on minimum pad. Total device dissipation is 187 mW at 25°C for one junction heated.

Datasheet Summary
Powered by GS/AI

The MUN5314DW1T1G is a complementary bias resistor transistor in a SOT-363 package, integrating an NPN and PNP transistor with monolithic bias resistors R1 = 10 kΩ and R2 = 47 kΩ. It has a collector-emitter voltage rating of 50 V, continuous collector current of 100 mA, and operates over a junction temperature range of -55°C to +150°C. The device is RoHS compliant, Pb-free, halogen-free, and AEC-Q101 qualified. Thermal resistance junction-to-ambient is 670 °C/W for one junction heated on minimum pad, or 493 °C/W for both junctions heated on minimum pad. Total device dissipation is 187 mW at 25°C for one junction heated.

Suppliers

Company
Product
Description
Supplier Links
Digital Transistor Polarity Onsemi - 27AC9495 - Newark, An Avnet Company
Chicago, IL, United States
Digital Transistor Polarity Onsemi
27AC9495
Digital Transistor Polarity Onsemi 27AC9495
Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:4.7(Ratio) RoHS Compliant: Yes

Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:4.7(Ratio) RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 27AC9495
Product Name Digital Transistor Polarity Onsemi
Transistor Type Digital Transistor Polarity Onsemi
Unlock Full Specs
to access all available technical data

Similar Products

Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW20N60CT - AIKW20N60CT - Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-247; PG-TO247-3
Transistor Grade / Operating Range Automotive
View Details
45 V, 500 mA PNP general-purpose transistors - BC807-40W,115 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
7 suppliers