onsemi Bipolar Transistor Arrays, Pre-Biased MUN5313DW1T1

Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
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Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - MUN5313DW1T1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5313DW1T1-ND
Bipolar Transistor Arrays, Pre-Biased MUN5313DW1T1-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Singapore
Dual 100mA 50V Bipolar Transistor
293-MUN5313DW1T1
Dual 100mA 50V Bipolar Transistor 293-MUN5313DW1T1
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN Product overview: MUN5313DW1T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5313DW1T1 can be used for catalog matching and distributor lookup.

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN Product overview: MUN5313DW1T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5313DW1T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5313DW1T1 - 809373-MUN5313DW1T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5313DW1T1
809373-MUN5313DW1T1
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5313DW1T1 809373-MUN5313DW1T1
Manufacturer: ON Semiconductor Win Source Part Number: 809373-MUN5313DW1T1 Packaging: Reel Mounting Style: SMD Power - Max: 250mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Part Status: Obsolete (End Of Life) Supplier Device Package: SC-88/SC70-6/SOT-363 Manufacturer Package: 6-TSSOP, SC-88, SOT-363 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Part Number Series: MUN53**DW1 DC Current Gain (hFE) (Min) at Ic, Vce: 80 at 5mA, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 809373-MUN5313DW1T1
Packaging: Reel
Mounting Style: SMD
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete (End Of Life)
Supplier Device Package: SC-88/SC70-6/SOT-363
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Part Number Series: MUN53**DW1
DC Current Gain (hFE) (Min) at Ic, Vce: 80 at 5mA, 10V

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5313DW1T1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5313DW1T1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5313DW1T1
TRANS PREBIAS NPN/PNP SOT363

TRANS PREBIAS NPN/PNP SOT363

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number MUN5313DW1T1-ND 293-MUN5313DW1T1 809373-MUN5313DW1T1 MUN5313DW1T1
Product Name Bipolar Transistor Arrays, Pre-Biased Dual 100mA 50V Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5313DW1T1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP NPN; PNP
Package Type 6-TSSOP, SC-88, SOT-363 SOT3
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 250 milliwatts
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