Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
TRANS PREBIAS NPN/PNP SOT363
50V NPN BRT Transistor, 100mA, SOT-363-6, 2-Ch Product overview: MUN5312DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5312DW1T1G can be used for catalog matching and distributor lookup.
Trans. Digital NPN/PNP 50V 100mA SC-88
Trans. Digital NPN/PNP 50V 100mA SC-88
Trans. Digital NPN/PNP 50V 100mA SC-88
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
TRANS PREBIAS NPN/PNP SOT363
BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; RF Transistor Case:SOT-363 RoHS Compliant: Yes
BRT TRANSISTOR, 50V, 22K/22KOHM, SOT-363, FULL REEL; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; No. of Pins:6 Pin RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | MUN5312DW1T1GOSTR-ND | MUN5312DW1T1G | 293-MUN5312DW1T1G | 6900199 | 6900199P | MUN5312DW1T1G | MUN5312DW1T1G | 09R9574 | 45J1728 |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | 50V 100mA Bipolar Transistor | Bipolar Transistors | Bipolar Transistors | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 22K/22Kohm, Sot-363; Digital Transistor Polarity Onsemi | Brt Transistor, 50V, 22K/22Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi |
| Polarity | NPN; PNP | 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP | NPN | NPN; PNP | NPN; PNP | ||||
| Package Type | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | Sot-363 (sc-88) | SOT-363 (SC-88) | TO-3; SOT3 | TO-3; SOT3 | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||||
| Output Power | 0.2500 watts |
