100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN Product overview: MUN5311DW1T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5311DW1T1 can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 809341-MUN5311DW1T1
Packaging: Cut Tape (CT)
Mounting Style: SMD
Power - Max: 385mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Obsolete (End Of Life)
Supplier Device Package: SC-88/SC70-6/SOT-363
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Part Number Series: MUN53**DW1
DC Current Gain (hFE) (Min) at Ic, Vce: 35 at 5mA, 10V
TRANS BRT DUAL 100MA 50V SOT363
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | 293-MUN5311DW1T1 | 809341-MUN5311DW1T1 | MUN5311DW1T1 |
| Product Name | Dual 100mA 50V Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5311DW1T1 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; PNP | NPN; PNP | |
| IC(max) | 100 milliamps | 100 milliamps | |
| VCEO | 50 volts | 50 volts | |
| PD | 385 milliwatts | ||
| TJ | -55 C (-67 F) |