onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5236DW1T1 MUN5236DW1T1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 108459-MUN5236DW1T1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 108459-MUN5236DW1T1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5236DW1T1 - 108459-MUN5236DW1T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5236DW1T1
108459-MUN5236DW1T1
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5236DW1T1 108459-MUN5236DW1T1
Manufacturer: ON Semiconductor Win Source Part Number: 108459-MUN5236DW1T1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 108459-MUN5236DW1T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5236DW1T1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5236DW1T1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5236DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 108459-MUN5236DW1T1 MUN5236DW1T1
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5236DW1T1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; 2 NPN - Pre-Biased (Dual)
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