Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R Product overview: MUN5232DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 385mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 385mW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5232DW1T1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Manufacturer: ON Semiconductor
Win Source Part Number: 024612-MUN5232DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 15 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
TRANS 2NPN PREBIAS 0.25W SOT363
TRANS 2NPN PREBIAS 0.25W SOT363
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
BRT TRANSISTOR, 50V 4.7K/4.7KOHM, SOT363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm RoHS Compliant: Yes
BRT TRANSISTOR, 50V 4.7K/4.7KOHM, SOT363, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; RF Transistor Case:SOT-363 RoHS Compliant: Yes
TRANS, NPN, 4.7K/4.7K, SOT-363-6; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm; Resistor Ratio, RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Transistors |
| Product Number | 293-MUN5232DW1T1G | MUN5232DW1T1GOSDKR-ND | 024612-MUN5232DW1T1G | MUN5232DW1T1G | MUN5232DW1T1G | MUN5232DW1T1G | 09R9572 | 88H4939 | 02AC3763 |
| Product Name | 50V 100mA 385mW Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5232DW1T1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistors - Pre-Biased | Brt Transistor, 50V 4.7K/4.7Kohm, Sot363; Digital Transistor Polarity Onsemi | Brt Transistor, 50V 4.7K/4.7Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi | Trans, Npn, 4.7K/4.7K, Sot-363-6; Digital Transistor Polarity Onsemi |
| Polarity | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual); NPN | NPN | ||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||||
| PD | 250 milliwatts | ||||||||
| TJ | -55 C (-67 F) |
