onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5216DW1T1G MUN5216DW1T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 024610-MUN5216DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5216DW1T1G - 024610-MUN5216DW1T1G - Win Source Electronics
    Win Source Electronics
  • Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1GOSTR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1GOSDKR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1GOSCT-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Brt Transistor, 50V, 4.7Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi - 71J6207 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Trans, Aec-Q101, Npn, 50V, 0.1A, Sot-363; Digital Transistor Polarity Onsemi - 13AC3679 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5216DW1T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 024610-MUN5216DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5216DW1T1G - 024610-MUN5216DW1T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5216DW1T1G
024610-MUN5216DW1T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5216DW1T1G 024610-MUN5216DW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 024610-MUN5216DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 024610-MUN5216DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
Dual Bipolar Transistor
293-MUN5216DW1T1G
Dual Bipolar Transistor 293-MUN5216DW1T1G
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: MUN5216DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5216DW1T1G can be used for catalog matching and distributor lookup.

Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: MUN5216DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5216DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5216DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5216DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1GOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5216DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5216DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5216DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased MUN5216DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5216DW1T1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
MUN5216DW1T1G
Bipolar Transistor Arrays, Pre-Biased MUN5216DW1T1G
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site Datasheet
Brt Transistor, 50V, 4.7Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi - 71J6207 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 4.7Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi
71J6207
Brt Transistor, 50V, 4.7Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi 71J6207
BRT TRANSISTOR, 50V, 4.7KOHM, SOT-363, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:- RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 4.7KOHM, SOT-363, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:- RoHS Compliant: Yes

Supplier's Site
Trans, Aec-Q101, Npn, 50V, 0.1A, Sot-363; Digital Transistor Polarity Onsemi - 13AC3679 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Trans, Aec-Q101, Npn, 50V, 0.1A, Sot-363; Digital Transistor Polarity Onsemi
13AC3679
Trans, Aec-Q101, Npn, 50V, 0.1A, Sot-363; Digital Transistor Polarity Onsemi 13AC3679
TRANS, AEC-Q101, NPN, 50V, 0.1A, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:-; Resistor RoHS Compliant: Yes

TRANS, AEC-Q101, NPN, 50V, 0.1A, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:-; Resistor RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5216DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5216DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5216DW1T1G
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 024610-MUN5216DW1T1G 293-MUN5216DW1T1G MUN5216DW1T1GOSTR-ND MUN5216DW1T1G 71J6207 13AC3679 MUN5216DW1T1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5216DW1T1G Dual Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased Brt Transistor, 50V, 4.7Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi Trans, Aec-Q101, Npn, 50V, 0.1A, Sot-363; Digital Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; 2 NPN - Pre-Biased (Dual) NPN NPN 2 NPN - Pre-Biased (Dual); NPN NPN
Package Type SOT3; SC-88/SC70-6/SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3; SOT3 TO-3; SOT3
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
PD 250 milliwatts
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