Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
TRANS 2NPN PREBIAS 0.25W SOT363
Manufacturer: ON Semiconductor
Win Source Part Number: 024610-MUN5216DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
BRT TRANSISTOR, 50V, 4.7KOHM, SOT-363, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:- RoHS Compliant: Yes
TRANS, AEC-Q101, NPN, 50V, 0.1A, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:-; Resistor RoHS Compliant: Yes
TRANS 2NPN PREBIAS 0.25W SOT363
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 293-MUN5216DW1T1G | MUN5216DW1T1GOSTR-ND | MUN5216DW1T1G | 024610-MUN5216DW1T1G | 71J6207 | 13AC3679 | MUN5216DW1T1G |
| Product Name | Dual Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5216DW1T1G | Brt Transistor, 50V, 4.7Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi | Trans, Aec-Q101, Npn, 50V, 0.1A, Sot-363; Digital Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | 2 NPN - Pre-Biased (Dual); NPN | NPN; 2 NPN - Pre-Biased (Dual) | NPN | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| PD | 250 milliwatts | ||||||
| TJ | -55 C (-67 F) |