The BRT Transistor (part number MUN5132DW1) is a dual PNP transistor with a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. It features an integrated bias resistor network with both base and base-emitter resistors set at 4.7kOc, simplifying circuit design and reducing component count. The device is housed in a SOT-363 package, which aids in minimizing board space. It is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards, being Pb-free and halogen-free. The transistor operates effectively within a junction temperature range of -55¬8C to +150¬8C, ensuring reliability in various environments.
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
TRANS PREBIAS 2PNP 50V SC88
BRT TRANSISTOR, 50V, 4.7K/4.7K, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm RoHS Compliant: Yes
BRT TRANSISTOR, 50V, 4.7K/4.7K, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors |
| Product Number | MUN5132DW1T1G-ND | MUN5132DW1T1G | 49X8881 |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 4.7K/4.7K, Sot-363; Digital Transistor Polarity Onsemi |
| Polarity | PNP | ||
| Package Type | 6-TSSOP, SC-88, SOT-363 | TO-3; SOT3 | |
| Packing Method | Tape Reel; Tape & Reel (TR) |
