onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5130DW1T1 MUN5130DW1T1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 208925-MUN5130DW1T1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 3 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 208925-MUN5130DW1T1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 3 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5130DW1T1 - 208925-MUN5130DW1T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5130DW1T1
208925-MUN5130DW1T1
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5130DW1T1 208925-MUN5130DW1T1
Manufacturer: ON Semiconductor Win Source Part Number: 208925-MUN5130DW1T1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 3 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 208925-MUN5130DW1T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 5mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 3 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 208925-MUN5130DW1T1
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5130DW1T1
Polarity PNP; 2 PNP - Pre-Biased (Dual)
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