The MUN5112T1 is a PNP silicon surface mount bipolar transistor with an integrated monolithic bias resistor network, designed to replace discrete transistor and resistor combinations. It is housed in the SC-70/SOT-323 package, measuring up to 2.20 mm in length, 1.35 mm in width, and 1.00 mm in height. The device has a maximum collector-base and collector-emitter voltage of 50 Vdc and a continuous collector current rating of 100 mAdc. It features a base resistor R1 of 22 kΩ and emitter resistor R2 of 22 kΩ, with a DC current gain (hFE) of 60 to 100 at VCE = 10 V and IC = 5.0 mA. The collector-emitter saturation voltage is ≤ 0.25 V at IC = 10 mA and IB = 1 mA. The part is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified for automotive applications. The die is protected by modified gull-wing leads for reliable wave and reflow soldering.
TRANS BRT PNP 100MA 50V SOT-323 / Pre-Biased Bipolar Transistor (BJT) Product overview: MUN5112T1 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100MA, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5112T1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 293-MUN5112T1 |
| Product Name | 100MA 50V Bipolar Transistor |
| Package Type | Bulk |
