onsemi N-Channel 100A 100V 0.011ohm MOSFET Transistor MTY100N10E

100A, 100V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA, CASE 340G-02, TO-264, 3 PIN Product overview: MTY100N10E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100A, 100V, 0.011ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100A, 100V, 0.011ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTY100N10E can be used for catalog matching and distributor lookup.

N-Channel 100V 100A (Tc) 300W (Tc) Through Hole TO-264

Manufacturer: ON Semiconductor
Win Source Part Number: 1081114-MTY100N10E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 378nC @ 10V
Max Input Capacitance: 10640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance