onsemi Single FETs, MOSFETs MTW32N20EG

Description
N-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247
Request a Quote Datasheet
Description
N-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTW32N20EGOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTW32N20EGOS-ND
Single FETs, MOSFETs MTW32N20EGOS-ND
N-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247

N-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247

Buy Now Datasheet
Singapore
N-Channel 200V 32A MOSFET Transistor
278-MTW32N20EG
N-Channel 200V 32A MOSFET Transistor 278-MTW32N20EG
200V 32A N-Channel Power MOSFET, 75mR, TO-247 Product overview: MTW32N20EG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTW32N20EG can be used for catalog matching and distributor lookup.

200V 32A N-Channel Power MOSFET, 75mR, TO-247 Product overview: MTW32N20EG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTW32N20EG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTW32N20EG - 1081113-MTW32N20EG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTW32N20EG
1081113-MTW32N20EG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTW32N20EG 1081113-MTW32N20EG
Manufacturer: ON Semiconductor Win Source Part Number: 1081113-MTW32N20EG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1081113-MTW32N20EG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 5000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
N Channel Mosfet, 200V, 32A, To-247; Channel Type Onsemi - 26K4667 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 32A, To-247; Channel Type Onsemi
26K4667
N Channel Mosfet, 200V, 32A, To-247; Channel Type Onsemi 26K4667
N CHANNEL MOSFET, 200V, 32A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:32A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 32A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:32A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTW32N20EG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTW32N20EG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTW32N20EG
MOSFET N-CH 200V 32A TO247

MOSFET N-CH 200V 32A TO247

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MTW32N20EGOS-ND 278-MTW32N20EG 1081113-MTW32N20EG 26K4667 MTW32N20EG
Product Name Single FETs, MOSFETs N-Channel 200V 32A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTW32N20EG N Channel Mosfet, 200V, 32A, To-247; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-3; TO-247 TO-247; TO-247-3
PD 180000 milliwatts 180000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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