onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP50P03HDLG MTP50P03HDLG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1081107-MTP50P03HDLG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 100nC @ 5V Max Input Capacitance: 4900pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 25 mOhm @ 25A, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP50P03HDLG - 1081107-MTP50P03HDLG - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - MTP50P03HDLGOS-ND - DigiKey
    DigiKey
  • MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V - 70100740 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTP50P03HDLG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type Onsemi - 98H0856 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1081107-MTP50P03HDLG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 100nC @ 5V Max Input Capacitance: 4900pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 25 mOhm @ 25A, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP50P03HDLG - 1081107-MTP50P03HDLG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP50P03HDLG
1081107-MTP50P03HDLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP50P03HDLG 1081107-MTP50P03HDLG
Manufacturer: ON Semiconductor Win Source Part Number: 1081107-MTP50P03HDLG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 100nC @ 5V Max Input Capacitance: 4900pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 25 mOhm @ 25A, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1081107-MTP50P03HDLG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 100nC @ 5V
Max Input Capacitance: 4900pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 25 mOhm @ 25A, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - MTP50P03HDLGOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTP50P03HDLGOS-ND
Single FETs, MOSFETs MTP50P03HDLGOS-ND
P-Channel 30V 50A (Tc) 125W (Tc) Through Hole TO-220

P-Channel 30V 50A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V - 70100740 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V
70100740
MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V 70100740
MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V

MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTP50P03HDLG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTP50P03HDLG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTP50P03HDLG
MOSFET P-CH 30V 50A TO220AB

MOSFET P-CH 30V 50A TO220AB

Supplier's Site
P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type Onsemi - 98H0856 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type Onsemi
98H0856
P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type Onsemi 98H0856
P CHANNEL MOSFET, -30V, 50A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 50A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1081107-MTP50P03HDLG MTP50P03HDLGOS-ND 70100740 MTP50P03HDLG 98H0856
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP50P03HDLG Single FETs, MOSFETs MOSFET, Power;P-Ch;VDSS 30VDC;RDS(ON) 0.02Ohm;ID 50A;TO-220AB;PD 125W;VGS +/-15V Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Channel Mosfet, -30V, 50A, To-220Ab; Channel Type Onsemi
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts
PD 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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