onsemi Single FETs, MOSFETs MTP2P50E

Description
MOSFET P-CH 500V 2A TO220AB
Request a Quote Datasheet
Description
MOSFET P-CH 500V 2A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTP2P50E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MTP2P50E
Single FETs, MOSFETs MTP2P50E
MOSFET P-CH 500V 2A TO220AB

MOSFET P-CH 500V 2A TO220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP2P50E - 139180-MTP2P50E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP2P50E
139180-MTP2P50E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP2P50E 139180-MTP2P50E
Manufacturer: ON Semiconductor Win Source Part Number: 139180-MTP2P50E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1183pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 139180-MTP2P50E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1183pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - MTP2P50EOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTP2P50EOS-ND
Single FETs, MOSFETs MTP2P50EOS-ND
P-Channel 500V 2A (Tc) 75W (Tc) Through Hole TO-220

P-Channel 500V 2A (Tc) 75W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTP2P50E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTP2P50E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTP2P50E
MOSFET P-CH 500V 2A TO220AB

MOSFET P-CH 500V 2A TO220AB

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number MTP2P50E 139180-MTP2P50E MTP2P50EOS-ND MTP2P50E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP2P50E Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 2000 milliamps
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