MOSFET P-CH 100V 12A TO220AB
Manufacturer: ON Semiconductor
Win Source Part Number: 1081101-MTP12P10G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 920pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial, Portable Devices, Consumer Electronics
Power MOSFET 12 Amps, 100 Volts, P Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MTP12P10G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTP12P10G can be used for catalog matching and distributor lookup.
P-Channel 100V 12A (Tc) 75W (Tc) Through Hole TO-220
TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 100V 12A TO220AB
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | MTP12P10G | 1081101-MTP12P10G | 278-MTP12P10G | MTP12P10GOS-ND | 50080951 | MTP12P10G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP12P10G | P-Channel TO-220 MOSFET Transistor | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| IDSS | 12000 milliamps |